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Frequency Multiply is a handy and reliable utility designed to enable users to multiply frequencies with original noise.
It’s completely portable and easy-to-use. You can use the VST-effect dinamic library as an audio plugin.
Let us know what you think about Noise Exposure v1.0
What is Clarity?
Clarity is a free virtual instrument and effect that turns your sound into a powerful and transparent tool.
The latest plugin updates are available on the plugin’s own website as well as on SoundCloud.1. Field of the Invention
The present invention relates to a manufacturing method of a semiconductor device.
2. Description of the Related Art
A DRAM (dynamic random access memory) is a highly integrated semiconductor device. In the DRAM, a capacitor including a lower electrode and a capacitor insulating film on the lower electrode is provided in an element forming region of a semiconductor substrate. The lower electrode is made of polycrystalline silicon. When a DRAM having a capacitor below and above a gate electrode is referred to as “a first generation DRAM,” a DRAM having a capacitor above the gate electrode is referred to as “a second generation DRAM,” and a DRAM having a capacitor below a gate electrode is referred to as “a third generation DRAM.”
A DRAM having a capacitor above a gate electrode is called a “stacked-capacitor DRAM,” and has a higher integration density than a DRAM having a capacitor below a gate electrode. It is said that a stacked-capacitor DRAM has a higher degree of integration than a second generation DRAM having a capacitor below a gate electrode.
A recent DRAM has a stacked-capacitor DRAM of a one-transistor/one-capacitor (1-Tr/1-C) type. The 1-Tr/1-C type of stacked-capacitor DRAM is mainly used for a high-speed DRAM.
A method of forming a lower electrode of a capacitor of the stacked-capacitor DRAM will be described below.
First, a lower electrode forming film is formed on a semiconductor substrate, and a lower electrode is formed.
Next, a first etching mask layer is formed on the lower electrode, and a first etching is carried out using the first etching mask
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